Innovative Ge Quantum Dot Functional Sensing and Metrology Devices
Abstract
This project successfully developed cutting-edge fabrication technologies for (1) the growth and autonomous migration mechanism of Germanium (Ge) quantum dots (QDs) within SiO2, Si3N4, and even Si substrate, (2) the realization of innovative Ge QD/Si coupled-QD (CQD) photodetectors and Ge QD MOS phototransistors for visible to near IR photodetection, (3) the demonstration of direct bandgap photoluminescence from tensile-strained Ge QDs embedded within SiO2 system, and (4) self-organized Ge QD MOSFETs . Our designer Ge QDs embedded within Si-containing layers provide a great promise for Si-based light sources, photodetectors, and transducer amplifiers for Si-based photon/charge sensing, photonics, and even optical interconnections. Si-based photon/charge sensor, photonics, and optical interconnects have shown tremendous promises for replacing tight-packing, large latency electrical wires thanks to their inherent advantages of low energy, high data-rate transmission, and huge data capacity. It is therefore imperative to exploit the co-residency of optical interconnects systems and electronic circuits on a single-chip platform to provide high-performance functional-diversification CMOS Si-integrated circuits. Motivation to employ Ge QDs for Si-based photonics is strong in light of its pseudo-direct gap electronic structure and the compatibility with Si CMOS technology.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 21, 2017
- Accession Number
- AD1042879
Entities
People
- Pei-wen Li
Organizations
- National Chiao Tung University