Thermal Simulations of a Silicon Carbide Super Gate Turn-Off (SGTO) with Pulsed Power Cycles

Abstract

We have performed computer simulations of thermal effects in a silicon carbide (SiC) super gate turn-off (SGTO) thyristor caused by short high-power pulses. We used two power pulses of different widths, repeated in multiple duty cycles, as inputs to our model. We used finite element analysis to calculate temperatures in and around the SiC dies during application of the power pulse and in the period between pulses.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2012
Accession Number
AD1043643

Entities

People

  • Gregory K. Ovrebo

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carbides
  • Ceramic Materials
  • Climate Change
  • Compound Semiconductors
  • Computer Simulations
  • Computer-Aided Design
  • Elements
  • Finite Element Analysis
  • Peak Power
  • Physical Properties
  • Power
  • Power Levels
  • Pulsed Power
  • Silicon
  • Silicon Carbide
  • Simulations
  • Three Dimensional

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering
  • Powder metallurgy of Titanium alloys.