Nanofabrication Technology for Production of Quantum Nano-Electronic Devices Integrating Niobium Electrodes and Optically Transparent Gates

Abstract

This technical report demonstrates nanofabrication technology for Niobium heterostructures and nanoscale quantum devices suitable for implementation in novel qubit/quantum memory. In particular electron beam lithography and atomic layer deposition are used. These processes integrate layouts suitable for high frequency microwave/RF excitation of the qubits/quantum memory as well as optically transparent gates in the area of the tunnel junction to enable combined spectroscopy and transport measurements while tuning the energy band at the tunnel junction. These devices are suitable for characterization in a cryo-magneto-optical probe station to access the superconducting regime of operation and that could be used for control and sending of qubit/quantum memory states to remote locations.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2018
Accession Number
AD1044668

Entities

People

  • Dave Rees
  • Osama M. Nayfeh

Organizations

  • Naval Information Warfare Systems Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Electrodes
  • Electron Beams
  • Electron Microscopes
  • Electron Microscopy
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Frequency
  • High Resolution
  • Materials
  • Microscopes
  • Microwaves
  • Nanofabrication
  • Radio Frequency
  • Scanning Electron Microscopes
  • Scanning Electron Microscopy
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nanocomposite Materials Science
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots