Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors

Abstract

In this work, a physics-based simulation of non-ionizing proton radiation damage effects at different energy levels on aGaN-on-silicon high electron mobility transistor was created. Based on physical results of 2.0-MeV protons irradiationto fluence levels of 6 1014 protonscm2, the simulation was tuned to match electron mobility n and then compared tothreshold voltage Vth on state resistance Ron and transconductance gm. A Monte Carlo simulator was used to model twoparticle interactions utilizing the Kinchin and Pease model. The model was developed in Silvaco ATLAS, but the Athenaand Victory Stress modules were also utilized. After comparison of changing characteristics between the model and thephysical device at 2.0-MeV proton irradiation, predictions were made for 5.0, 10.0, 20.0 and 40.0-MeV proton irradiation.The model generally overpredicted damage in the lattice when compared to the physical results seen in prior work.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2017
Accession Number
AD1045792

Entities

People

  • Robert T Augustine

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charge Carriers
  • Compound Semiconductors
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Electron Mobility
  • Electronics Laboratories
  • Energy Bands
  • Gallium Nitrides
  • High Electron Mobility Transistors
  • Ionizing Radiation
  • Metal-Semiconductor Junctions
  • Modules (Electronics)
  • Point Defects
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Physics

Readers

  • Data Mining and Knowledge Discovery.
  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics