Synthesis of Large-Area 2D Layered Materials and Their Heterostacking Structures

Abstract

Transition metal dichalcogenides (TMDs) have been recognized as a new class of semiconducting two-dimensional (2D) layered materials, which open up new opportunities in semiconductor technology for developing future 2D electronics and optoelectronics. Monolayer TMDs also feature their direct energy band gap, good carrier mobility and excellent ON/OFF current ratio when fabricated into field effect transistors, which are important properties for future low-power electronics and optoelectronics. For further applications in advanced circuits, the development of two-dimensional (2D) p-n junction is prerequisite. The research team has successfully shown the direct growth of atomically sharp p-n junction between WSe2 and MoS2. (Science, 349, 524 (2015)). This demonstrates the state-of-the-art growth in this field. The heterostructural interface presents a nice p-n junction, which is a key component for monolayer electronics.

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Document Details

Document Type
Technical Report
Publication Date
Oct 13, 2017
Accession Number
AD1046056

Entities

People

  • Chih-Wei Chu
  • Lain-Jong Li

Organizations

  • Academia Sinica

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Gaps
  • Bipolar Junction Transistors
  • Chemical Vapor Deposition
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Heterojunctions
  • Materials
  • Optoelectronics
  • P-N Junctions
  • Power Electronics
  • Semiconductors
  • Transistors
  • Transition Metals
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Microelectronics - Graphene