Modeling and Simulation for Particle Radiation Damage to Electronic and Opto-Electronic Devices

Abstract

In this effort, we have undertaken fundamental studies on vertical transport in an antimonide-based semiconductor superlattice structure. For this purpose, we used theoretical expressions based on Hovel model to extract the minority carrier diffusion length of a unipolar nBp type-II superlattice (T2SL) mid-wave infrared detector. Combining these results with the lifetime via Time-Resolved Photoluminescence (TRPL) data, we were able to additionally determine the minority vertical mobility and diffusivity, providing a comprehensive picture of vertical transport characteristics of the excited carrier in the nBp T2SLdetectors. Finally, we performed dark current modeling and investigated the dominant dark current mechanisms at different temperatures. Our next step is to investigate the origin, types, and effects of radiation damage on this structure.

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Document Details

Document Type
Technical Report
Publication Date
Jan 25, 2018
Accession Number
AD1047876

Entities

People

  • Sanjay Krishna

Organizations

  • University of New Mexico

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Air Force
  • Air Force Research Laboratories
  • Band Gaps
  • Current Density
  • Detectors
  • Diffusion
  • Diffusion Coefficient
  • Electric Fields
  • Energy Bands
  • Infrared Detectors
  • Mobility
  • Optoelectronic Devices
  • Quantum Efficiency
  • Radiation
  • Semiconductors
  • Spacecraft

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics