Assessment of Phosphorene Field-Effect Transistors

Abstract

During the project period, phorsphorene field-effect transistors (FETs) were successfully passivated with atomic-layer deposited Al2O3 and proven to be stable for at least three months in room air. Meanwhile, the FET design evolved from long back-gated channels on conducting substrates that could be assessed only under direct-current conditions, to submicron top-gated channels that could operate at microwave frequencies under both small-signal and large-signal conditions. Further, CMOS-compatible submicron buried-gate structures were designed. However, lacking large-area phosphorene layers, the design was demonstrated only on monolayer MoS2 grown by chemical vapor deposition.

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Document Details

Document Type
Technical Report
Publication Date
Jan 28, 2018
Accession Number
AD1049912

Entities

People

  • James C. M. Hwang

Organizations

  • Lehigh University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Dielectrics
  • Direct Current
  • Electronics
  • Electronics Industry
  • Field Effect Transistors
  • Films
  • Materials
  • Materials Processing
  • Materials Science
  • Military Research
  • Monomolecular Films
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • Two Dimensional
  • Vapor Deposition

Readers

  • Electronics Engineering
  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.