GeSn Based Near and Mid Infrared Heterostructure Detectors

Abstract

This final report presents results obtained during the period of June 27th, 2016 to December 26, 2018 for the basic research project intended to advance the science and technology of Si photonics based on SiGeSn material system with focus on near and mid infrared GeSn detectors and focal plane arrays that operate from 1.5 to around 2.0 micron wavelength range. During this period, we have strengthened our existing collaborations with Prof. Cheng group at National Taiwan University, Dr. Hendrickson at Air Force Research Laboratories, and Prof. Yus group at University of Arkansas. We have made innovative contributions to the material development and device development that directly impact the areas of group IV photonics for mid-infrared applications. Results were published in prestigious journals. This report will highlight a few significant contributions.

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Document Details

Document Type
Technical Report
Publication Date
Feb 07, 2018
Accession Number
AD1050178

Entities

People

  • Greg Sun

Organizations

  • University of Massachusetts Boston

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Structures
  • Detection
  • Detectors
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Infrared Detection
  • Light Emitting Diodes
  • Materials
  • Modules (Electronics)
  • Optical Properties
  • Optics
  • Optoelectronics
  • Power Electronics
  • Quantum Wells
  • Semiconductors

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Research Science/Academic Research