Ballistic Deflection Transistors for THz Amplification

Abstract

The main objective of this collaborative project, between the University of Massachusetts Lowell and the University of Rochester, has been development of novel THz-bandwidth nanostructures based on room temperature, ballistic electron transport in 2-dimensional electron gas in III-V semiconductors. We have been working on amplifier structures using ballistic deflection transistors (BDTs) and initiated research on self-switching diodes (SSDs) that are unique planar nanostructures with diode-like characteristics.

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Document Details

Document Type
Technical Report
Publication Date
May 09, 2016
Accession Number
AD1050680

Entities

People

  • Hui Wu
  • Roman Sobolewski

Organizations

  • University of Rochester

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical

DTIC Thesaurus Topics

  • Amplifiers
  • Bandwidth
  • Crystals
  • Detectors
  • Electromagnetic Radiation
  • Electron Gas
  • Electrons
  • Engineering
  • Femtosecond Lasers
  • Femtosecond Time
  • Films
  • Frequency
  • Materials
  • Materials Science
  • Optical Properties
  • Physics
  • Picosecond Time
  • Semiconductors
  • Simulations
  • Single Crystals
  • Solar Cells
  • Spectroscopy
  • Transistors
  • Two Dimensional

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Research Science/Academic Research
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics