Emergent Phenomena at Mott Interfaces

Abstract

The objective of the multidisciplinary university research initiative (MURI) Emergent Phenomena at Mott Interfaces was to establish fundamentally new approaches to predict, understand, and control the wealth of electronic, spin and collective mode excitations associated with Mott metal-insulator transitions at complex oxide interfaces. This report summarizes the main accomplishments over the duration of this MURI.

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Document Details

Document Type
Technical Report
Publication Date
Nov 03, 2016
Accession Number
AD1051048

Entities

People

  • Charles Fadley
  • Chris Palmstrom
  • Chris Van De Walle
  • Leon Balents
  • Lu Jie
  • S. J. Allen
  • S. Stemmer
  • Shriram Ramanathan
  • Stuart Parkin
  • Susanne Stemmer

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Electron Density
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Hard X Rays
  • Magnetic Fields
  • Metal-Insulator Transitions
  • Phase Transformations
  • Quantum Wells
  • Semiconductors
  • Soft X Rays
  • Spin-Orbit Interaction
  • Standing Waves
  • Transition Temperature
  • Two Dimensional
  • X Rays

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene