Thermal Simulation of a Silicon Carbide (SiC) Insulated-Gate Bipolar Transistor (IGBT) in Continuous Switching Mode

Abstract

Thermal simulations were used to calculate temperatures in a silicon carbide (SiC) Insulated-Gate Bipolar Transistor (IGBT),simulating device operation in a DC-DC power converter switching at a frequency of up to 15 kHz. Calculations also estimated the effect of solder layers on temperature in the device.

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Document Details

Document Type
Technical Report
Publication Date
May 16, 2018
Accession Number
AD1052078

Entities

People

  • Gregory Ovrebo

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Carbides
  • Compound Semiconductors
  • Converters
  • Dc-To-Dc Converters
  • Elements
  • Frequency
  • Military Research
  • Power Converters
  • Silicon
  • Silicon Carbide
  • Simulations
  • Steady State
  • Switching
  • Thermal Resistance
  • Transistors

Fields of Study

  • Engineering

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.
  • Reinforced Composite Materials

Technology Areas

  • Microelectronics