Ultrahigh Responsivity Of Optically Active, Semiconducting Asymmetric Nano channel Diodes
Abstract
We present our research on the fabrication and optical characterization of novel semiconducting asymmetric nano-channel diodes (ANCDs). We focus on optical properties of ANCDs and demonstrate that they can be operated as very sensitive, single-photonlevel, visible-light photodetectors. Our test devices consisted of 1.2-micron-long, roughly 200- to 300-nm-wide channels that were etched in an InGaAs/InAlAs quantum-well heterostructure with a two dimensional electron gas layer. The ANCD IV curves were collected by measuring the transport current both in the dark and under 800-nm-wavelength, continuous-wavelight laser illumination. In all of our devices, the impact of the light illumination was very clear, and there was a substantial photocurrent, even for incident optical power as low as 1 nW. The magnitude of the optical responsivity in ANCDs with the conducting nano-channel increased linearly with a decrease in optical power over many orders of magnitude, reaching a value of almost 10,000 A/W at 1-nW excitation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 13, 2015
- Accession Number
- AD1052249
Entities
People
- A. Stern
- L. Q. Zhang
- Y Akbas
Organizations
- University of Rochester