Radiation Effects in Ultra-Wide Bandgap AlN Schottky Diodes

Abstract

Ultra-wide bandgap AlN Schottky diodes were fabricated by metal organic chemical vapor deposition and tested under gamma-ray and proton radiation conditions. The breakdown voltage and leakage currents were found to be strongly dependent on the temperature and surface area of the diodes. Radiation effects degraded forward currents slightly but had little impact on the crystal quality.

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Document Details

Document Type
Technical Report
Publication Date
Mar 12, 2018
Accession Number
AD1052606

Entities

People

  • Hong Chen
  • Houqiang Fu
  • Jossue Montes
  • Xuanqi Huang
  • Yuji Zhao

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Spectra
  • Chemical Vapor Deposition
  • Diffraction
  • Electron Beams
  • Energy Bands
  • Energy Levels
  • Gamma Rays
  • High Temperature
  • Ionization
  • Materials
  • Metal-Semiconductor Junctions
  • Radiation
  • Scattering
  • Schottky Diodes
  • Spectra
  • Valence Bands
  • X Rays

Fields of Study

  • Materials science

Readers

  • Solar Photovoltaics and Thermoelectric Devices.
  • Solar Physics
  • Thin Film Deposition Science.