Emergent Phenomena at Mott Interfaces

Abstract

The objective of the multidisciplinary university research initiative (MURI) Emergent Phenomena at Mott Interfaces was to establish fundamentally new approaches to predict, understand, and control the wealth of electronic, spin and collective mode excitations associated with Mott metal-insulator transitions at complex oxide interfaces. This report summarizes the main accomplishments over the duration of this MURI.

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Document Details

Document Type
Technical Report
Publication Date
Mar 11, 2016
Accession Number
AD1053320

Entities

People

  • C. Fadley
  • C. Palmstrom
  • C. Van De Walle
  • D. Goldhaber-gordon
  • L. Balents
  • Lu Jie
  • S. J. Allen
  • S. Stemmer
  • Shriram Ramanathan

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Electric Fields
  • Electron Density
  • Electron Gas
  • Electron Mobility
  • Electrons
  • Engineering
  • Field Effect Transistors
  • Films
  • Hard X Rays
  • Heterojunctions
  • Magnetic Fields
  • Materials
  • Metal-Insulator Transitions
  • Phase Transformations
  • Quantum Wells
  • Semiconductors
  • Soft X Rays
  • Standing Waves
  • Thin Films
  • Transition Temperature
  • Two Dimensional
  • X Rays

Fields of Study

  • Physics

Readers

  • Computational Fluid Dynamics (CFD)
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene