Studies of Hot Photoluminescence in Plasmonically Coupled Siliconvia Variable Energy Excitation and Temperature Dependent Spectroscopy

Abstract

By integrating silicon nanowires (150 nm diameter, 20 m length) with an -shaped plasmonic nanocavity, we are able to generate broadband visible luminescence, which is induced by high order hybrid nanocavity-surface plasmon modes. The nature of this super bandgap emission is explored via photoluminescence spectroscopy studies performed with variable laser excitation energies (1.959 to 2.708 eV) and finite difference time domain simulations. Furthermore, temperature-dependent photoluminescence spectroscopy shows that the observed emission corresponds to radiative recombination of unthermalized (hot) carriers as opposed to a resonant Raman process.

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Document Details

Document Type
Technical Report
Publication Date
Aug 14, 2015
Accession Number
AD1055467

Entities

People

  • Carlos O. Aspetti
  • Chang-hee Cho
  • Rahul Agarwal
  • Ritesh Agarwal

Organizations

  • University of California, Irvine

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Conduction Bands
  • Electric Fields
  • Electron Microscopes
  • Electron Microscopy
  • Electronic States
  • Energy Bands
  • Frequency
  • Frequency Domain
  • Materials
  • Materials Science
  • Measurement
  • Quantum Yields
  • Raman Spectroscopy
  • Scattering
  • Spectra
  • Spectroscopy

Fields of Study

  • Materials science
  • Physics

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers