Modeling an Actinide-Based, Direct-Conversion Neutron Detector

Abstract

Direct-conversion, solid-state neutron detectors may be capable of detecting neutrons in a smaller volume with a much lower applied bias voltage than traditional high-efficiency neutron detectors. Significant progress has been achieved in synthesizing single-crystal uranium dioxide (UO2) and thorium dioxide (ThO2); however, the electrical properties of these actinide-based semiconductors are not well established. A method to model and assess the solid-state neutron detection potential of prototype samples is presented. The model development and verification process is described in detail, and the model is employed to estimate physical design constraints (i.e. thickness and contact diameter) for a UO2 detector. Actinide-based materials offer the potential for generating large energy pulses within the detection volume, but model results suggest that enhancing the materials electrical properties, to ensure the deposited energy is collected efficiently, is essential. When applicable, geometric design constraints should be applied to optimize detection efficiency.

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Document Details

Document Type
Technical Report
Publication Date
Mar 22, 2018
Accession Number
AD1056262

Entities

People

  • Jay E. Ostler

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Actinides
  • Air Force
  • Alpha Particles
  • Background Radiation
  • Carrier Mobility
  • Ceramic Materials
  • Charge Carriers
  • Compound Semiconductors
  • Computational Science
  • Detectors
  • Electrical Properties
  • Electrons
  • Energy Bands
  • Fission
  • Gamma Rays
  • Geometry
  • Ionization
  • Measurement
  • Neutron Cross Sections
  • Neutron Detectors
  • Nuclear Physics
  • Nuclear Reactions
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Materials Science and Engineering.
  • Nuclear and Radiation Engineering.

Technology Areas

  • Microelectronics