GeSn Based Near and Mid Infrared Heterostructure Detectors

Abstract

Group-IV photonics on Si platform is an important and emerging area that has attracted much attention from both academia and industry, driven by the need for the integration of photonic devices with Si electronics to enhance the performance of optoelectronic systems. Two key results are summarized in this report. As a result, practical devices are possible. These are: (a) direct bandgap group IV materials of GeSn with lowest defect density and highest Sn content for the material, (b) Evaluation of GeSn-based photodetector and a comparison with commercial bulk Ge photodetector at 1550 nm. These results provide a direct impact to the all group IV photonic as well as paving the way to the monolithic integration of optic and electronic devices in a single chip which will be eventually realized in the Si-based foundry on optoelectronic chip.

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Document Details

Document Type
Technical Report
Publication Date
Mar 13, 2018
Accession Number
AD1056983

Entities

People

  • Hung H. Cheng

Organizations

  • National Taiwan University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Crystals
  • Detectors
  • Diffraction
  • Diodes
  • Electronics Industry
  • Films
  • Heterojunctions
  • Materials
  • Modules (Electronics)
  • Optics
  • Optoelectronics
  • Photodetectors
  • Power Electronics
  • Quantum Wells
  • Semiconductors
  • X Rays

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics