Group-IV Interband and Intersubband Semiconductor Lasers Based on SiGe Nanomembranes

Abstract

This project has been aimed at the development of mid- and far-infrared laser active materials based on the group-IV semiconductors Si, Ge, and SiGe (the leading materials platform of microelectronics). Because of their intrinsic CMOS compatibility, group-IV diode lasers have significant technological potential, including applications of high relevance to the DoD mission. Their implementation, however, is severely complicated by the indirect-bandgap nature of Si(Ge). Our approach to address this challenge has been based on the use of group-IV nanomembranes (NMs) in two novel ways: (1) the formation of direct-bandgap Ge through the introduction of large biaxial tensile strain in mechanically stressed Ge NMs, and(2) the development of high-quality SiGe THz quantum cascade structures consisting of strain-engineered multiple-quantum-well NMs.

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Document Details

Document Type
Technical Report
Publication Date
Jul 19, 2018
Accession Number
AD1057734

Entities

People

  • Max G. Lagally
  • Roberto Paiella

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Lattices
  • Crystals
  • Electronics Laboratories
  • Energy Bands
  • Heterojunctions
  • Laser Diodes
  • Modules (Electronics)
  • Optical Phenomena
  • Optical Properties
  • Optoelectronic Devices
  • Photonic Crystals
  • Quantum Cascade Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing