Simulation of a High-Voltage Silicon Carbide (SiC) Power Diode under High-Action Pulsed Operation

Abstract

Future Army pulsed-power applications require semiconductor devices that will meet high-power, low-weight and volume, and fast-switching-speed constraints. This report details the pulse evaluation and corresponding modeling and simulation of 10-kV silicon carbide PiN diodes. The diode conducted a pulse current of 2.6 kA at a 1-ms pulse width with an instantaneous power dissipation of 26 kW. A model of a high-power PiN diode was developed in the Silvaco Atlas software to better understand the extreme electrical stresses in the power diode when subjected to a high-current pulse. Simulation of the on-state current and voltage across the diode closely matched measured data. Current density distribution through the device was analyzed and areas of localized high current density were identified.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2018
Accession Number
AD1058378

Entities

People

  • Aderinto Ogunniyi
  • Heather O'Brien
  • Miguel Hinojosa

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Carbides
  • Ceramic Materials
  • Compound Semiconductors
  • Current Density
  • Electronics Laboratories
  • High Voltage
  • Pin Diodes
  • Pulsed Power
  • Semiconductor Devices
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Simulations
  • Simulators
  • Specific Heat
  • Thermal Conductivity

Fields of Study

  • Physics

Readers

  • Computational Modeling and Simulation
  • Electrical Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics