Band Structure and Band Offset Characterization of Semiconductor Heterojunctions
Abstract
This report describe our work using p-type heterostructure devices as a platform to study band structure and band offset of heterojunctiondevice structures. The goal is to understandthe field-induced and temperature dependent changes in the valence band (VB) structure and relative properties used for designingand fabricating devices, such as absorption properties, carrier transports at the non-zero field condition, band parameters including the VBsplitting energies, effective masses, and the band alignment atinterfaces of heterojunctions, etc., by looking into the inter-valence-subband (IVSB) transitions caused photo-response spectroscopy. Theseideas were applied to HgCdTE , GaAs/AlGaAs and type II superlattice type detectors. Hence this work provides critical information forheterostructure device development, not only for p-type Heiwip devices but also for p-n junction devices, HgCdTE detectors, type IIsuperlattice detectors and in general for future detector development efforts.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 05, 2017
- Accession Number
- AD1058587
Entities
People
- A. G. Perera
- Dilip Chauhan
- Yan-feng Lao
Organizations
- Georgia State University