Electrically Injected 280 nm AlGaN Nanowire Lasers on Silicon
Abstract
To date, the performance of deep UV optoelectronic devices has been limited by the presence of extremely large densities of threading dislocations, strong polarization field and the related quantum-confined Stark effect, and extremely poor p-type conduction of AlN. We have recently demonstrated that the afore-described challenges for achieving high performance deep UV optoelectronic devices can be fundamentally addressed by the emerging AlGaN nanowire structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 2017
- Accession Number
- AD1058786
Entities
People
- Zetian Mi
Organizations
- McGill University