Two-Step Etch Process for Fabrication of III-V Nanolasers
Abstract
In this project, we sought to better optimize and understand the two-step etch process for creating GaN-based nanowires which are of interest for nanolasers and other applications. Additionally, we also sought to explore whether an analogous two-step etch approach, could be feasible and developed for traditional III-V semiconductors (e.g. GaAs-based), leading to a top-down process for creating III-V nanowire lasers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 27, 2017
- Accession Number
- AD1058842
Entities
People
- Ganesh Balakrishnan
Organizations
- University of New Mexico