Antimonide-Based III-V Ternary Nanowire Materials for High Performance Infrared Photodetector Applications

Abstract

The PI has had very good success in this basic research grant. They were able to achieve MOCVD growth of good quality GaAsSb/InP core-shell materials, demonstrated the fabrication of GaAsSb core-only andGaAsSb/InP core-shell single NW photodetectors, and characterized and compared GaAsSb core-only and GaAsSb/InP core-shellsingle NW photodetectors, demonstrating much improved detector performance using GaAsSb/InP core-shell NWs. They have also successfully grown a series of GaAsSb nanowire arrays with different NW diameters and pitches and fabricated nanowire array photodetectors and obtain preliminary data. The PI has 1 peer reviewed paper in submission, and 3 conference presentations as a direct result of the grant.

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Document Details

Document Type
Technical Report
Publication Date
Jun 18, 2018
Accession Number
AD1058860

Entities

People

  • Chennupati Jagadish
  • Lan Fu

Organizations

  • Australian National University

Tags

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Chemical Vapor Deposition
  • Communication Systems
  • Detectors
  • Electron Beam Lithography
  • Electron Microscopes
  • Electronic Mail
  • Light Sources
  • Materials
  • Materials Engineering
  • Materials Science
  • Metal-Semiconductor Junctions
  • Microscopes
  • Microscopy
  • Optical Properties
  • Optics
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology
  • Technical Research and Report Writing.