Research Area 11.1 ARO STIR Program: The Chaotic Quantum Oscillator

Abstract

We analyze the sequential resonant tunneling model of electron transport in weakly coupled, n-doped semiconductor superlattices under a DC voltage bias. From the Poincare map, we illustrate the bifurcations of the electronic dynamics as the bias voltage is smoothly varied. We also vary the number of periods making up the superlattice, as well as the strength of (time-independent) random perturbations in the widths of the wells and barriers and (time-dependent) noise in the bias voltage and tunneling rates. We find supercritical Hopf bifurcations, period doubling bifurcations, and period-doubling cascades, all of which are robust against the additional perturbations. These bifurcations have been predicted for single assymetric quantum wells at terahertz frequencies, but in superlattices, these bifurcations occur at gigahertz frequencies and are easier to measure.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 30, 2017
Accession Number
AD1059314

Entities

People

  • Birnir Bjorn

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics
  • Human Systems

DTIC Thesaurus Topics

  • Abstracts
  • Agreements
  • Department Of Defense
  • Detectors
  • Dynamics
  • Engineering
  • Frequency
  • Low Noise
  • Low Noise Amplifiers
  • Mathematics
  • Optical Detectors
  • Oscillators
  • Random Number Generators
  • Semiconductors
  • Students
  • Superlattices
  • Technology Transfer

Readers

  • Control Systems Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing