Aluminum Nitride to Aluminum Nitride Direct Wafer Bonding

Abstract

A wafer-bonding process based on plasma surface activation of sputter-deposited thin film aluminum nitride (AlN) was studied. The purpose of this investigation and process development was to eventually use AlN as a bonding medium between Metal Organic Chemical Vapor Deposition-grown gallium nitride material and diamond substrate material.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2018
Accession Number
AD1060329

Entities

People

  • Kimberley A. Olver

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Aluminum
  • Aluminum Nitrides
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Electrical Properties
  • Elements
  • Films
  • Gallium Nitrides
  • Hydrogen
  • Hydroxides
  • Materials
  • Materials Processing
  • Materials Science
  • Metals
  • Military Research
  • Nitrides
  • Quantum Wells
  • Semiconductors
  • Silicon Compounds
  • Substrates
  • Thick Films
  • Thin Films
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene