Optimal Tunneling Enhances the Quantum Photovoltaic Effect in Double Quantum Dots

Abstract

We investigate the quantum photovoltaic effect in double quantum dots by applying the nonequilibrium quantum master equation. A drastic suppression of the photovoltaic current is observed near the open circuit voltage, which leads to a large filling factor. We find that there always exists an optimal inter-dot tunneling that significantly enhances the photovoltaic current. Maximal output power will also be obtained around the optimal inter-dot tunneling. Moreover, the open circuit voltage behaves approximately as the product of the eigen-level gap and the Carnot efficiency. These results suggest a great potential for double quantum dots as efficient photovoltaic devices.

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Document Details

Document Type
Technical Report
Publication Date
Apr 25, 2014
Accession Number
AD1060697

Entities

People

  • Chen Wang
  • Jianshu Cao
  • Jie Ren

Organizations

  • Singapore-MIT Alliance for Research and Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Cells
  • Efficiency
  • Electrons
  • Energy
  • Energy Gaps
  • Equations
  • Ground State
  • Heat Transfer
  • Photovoltaic Effect
  • Physics
  • Quantum Dots
  • Quantum Tunneling
  • Short Circuits
  • Solar Cells
  • Solar Energy
  • Steady State

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Operations Research
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing