Pump-Probe Study of fs-Laser Hyperdoping and Texturing of Silicon for Advanced Non-equilibrium Materials
Abstract
In this final report, we describe our progress in studying ultrafast laser modification of silicon, with a focus on better understanding the inception of surface texturing and laser-induced periodic surface structures (LIPSS) at low fluences. We also briefly describe the recent extension of our work to ultrafast laser modification of gallium phosphide (GaP), a III-V semiconductor material with high second-order nonlinear susceptibility. We close with a discussion of other current work, including fundamental studies of nanosecond-laser treatment of germanium (Ge) in order to develop hyper doped Ge for Short Wavelength-Infrared (SWIR) photodetection, future directions, and a list of published work supported thus far through the AFOSRs support. We sincerely thank the AFOSR for its continued support throughout the project.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 17, 2017
- Accession Number
- AD1061497
Entities
People
- Eric Mazur
Organizations
- Harvard University