Radiation Effects in High k Gate Dielectrics on 111-V Semiconductor
Abstract
This research project was conducted to further the fundamental understanding of mechanisms of radiation effects in high-k gate dielectrics on 111-V semiconductors, such as GaAs, lnGaAs, lnAs, GaN, AIN, and GaAIN etc. with an emphasis on the the total ionization dose (TIO) effects on the generation mechanisms of electrically active defects in the gate dielectrics and at the interfaces that cause radiation-induced threshold voltage shift, degraded transconductance, increased leakage current, and decreased dielectric breakdown strength. The most significant results, including those related to TIO-induced defects in the gate stacks and their effects on device performance and reliability are reported.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 2018
- Accession Number
- AD1062629
Entities
People
- T. P. Ma
Organizations
- Yale University