Understanding Mechanisms of Radiation Degradation in Electronic and Optoelectronic Devices: A Multi-timescale Model

Abstract

The purpose of this funding is to support the development of a theory to describe effects of radiation-induced defects in electronic and optoelectronic devices. No actual experiments will be performed on this effort. This project will continue a research effort at the University of Michigan to simulate atomistic, and meso-scale behavior of defect evolutions in compound semiconductors, including ultrafast displacement cascade, intermediate defect stabilization and cluster formation,as well as slow defect reaction and migration. Based on atomic-level simulations, non-ionization energy loss has been determined.

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Document Details

Document Type
Technical Report
Publication Date
Oct 16, 2018
Accession Number
AD1065545

Entities

People

  • Fei Gao

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Band Gaps
  • Compound Semiconductors
  • Crystal Lattices
  • Crystals
  • Density Functional Theory
  • Energy Bands
  • First Principles Calculations
  • Molecular Dynamics
  • Optoelectronic Devices
  • Point Defects
  • Radiation
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Simulations
  • Spacecraft

Fields of Study

  • Physics

Readers

  • Agricultural Chemistry/Soil Science
  • Computational Fluid Dynamics (CFD)
  • Integrated Circuit Design and Technology.

Technology Areas

  • Microelectronics