Emergent Nontrivial Phenomena in Quantum Heterostructures and Their Applications in Electronics

Abstract

We demonstrated the nonlinear unidirectional spin-dependent magnetoresistance (USMR) in the modulation-doped magnetic topological insulators. This USMR arises due to the interplay between the magnetic dopants magnetization and the current-induced surface spin polarization, when they are parallel or antiparallel to each other in the TI material. By changing the dopants position in the structure, we reveal that the USMR is mainly originating from the interaction between the magnetization and the surface polarized spins, not the bulk carriers. Furthermore, from the magnetic field-, the angular rotation- and the temperature-dependence, we highlight the correlation between the USMR effect and the magnetism in the structures. The large USMR vs.

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Document Details

Document Type
Technical Report
Publication Date
May 31, 2016
Accession Number
AD1066278

Entities

People

  • Kang L. Wang

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Angular Momentum
  • Band Structures
  • Current Density
  • Electric Current
  • Electronics
  • Energy Bands
  • Films
  • Geometry
  • Heavy Metals
  • Magnetic Fields
  • Magnetic Materials
  • Materials
  • Momentum
  • Orientation (Direction)
  • Quantum Heterostructures
  • Quantum Properties
  • Spin-Orbit Interaction

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Optical Fiber Sensing and Electromagnetic Propagation.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots