Band-Anticrossed Low-Noise Avalanche Photodiode Materials

Abstract

The major goal of this effort was to significantly increase the multiplication levels and extended spectral response from InAs-based avalanche photodiodes (APD), as well as a superior understanding of the fundamental material properties that give rise to low-noise multiplication. The major goal of the Add-On to the program was to unambiguously demonstrate the staircase APD operation using the AlInAsSb alloy system. Please see the attached PDF for more details.

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Document Details

Document Type
Technical Report
Publication Date
Nov 11, 2018
Accession Number
AD1067044

Entities

People

  • Joe C. Campbell
  • Seth R. Bank

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Avalanche Photodiodes
  • Band Structures
  • Conduction Bands
  • Current Density
  • Electric Fields
  • Electrons
  • Energy Bands
  • Lasers
  • Low Noise
  • Low Temperature
  • Materials
  • Mesa Diodes
  • Monte Carlo Method
  • Optical Properties
  • Photodiodes
  • Simulations

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy