Doping Of Diamond beyond Thermodynamic Solubility Limit For Electronic Applications
Abstract
We have achieved a proof of concept for n- and p-doping of diamond based on the recently discovered direct conversion of amorphous carbon into diamond at ambient temperatures and pressures in air. The key advantage stems from the novel growth approach, where the carbon layers are melted by using high-power nanosecond pulsed lasers in a highly super undercooled state, and then quenched rapidly either into a new state of carbon (Q-carbon) or into the single-crystal diamond phase in the presence of a template for diamond growth. Accordingly, it is envisioned that dopant impurities present in the amorphous carbon films can be incorporated into substitutional (electrically active) sites of diamond during rapid liquid-phase crystallization via the phenomenon of solute trapping.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 05, 2018
- Accession Number
- AD1067398
Entities
People
- Jagdish Narayan
Organizations
- North Carolina State University