Development of the III-V Barrier Photo Detector Heterostructures for Spectral Range Above 10 um
Abstract
Novel approach to growth of quality narrow gap InAsSb alloys for wavelength range from 5 to 12 m using metamorphic buffers on GaSb substrates was pursued. The developed GaInSb and AlInSb buffers served as a platform for strain-free low-dislocation-density bulk InAsSb layers. The ability to select the lattice constant up to 3 percent greater than that of GaSb eliminated the lattice constant design constrain in the realization of III-V narrow gap semiconductors grown pseudomorphically on GaSb or other binary substrates. The developed quality bulk InAsSb layers with energy gaps as low as 90 meV at 77 K exhibit strong fundamental absorption and long diffusion length of minority holes. The effort was focused on determination of the fundamental parameters of InAsSb alloys with target Sb compositions covering the range from 20 to 65 percent.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 21, 2018
- Accession Number
- AD1067866
Entities
People
- Dmitri Donetski
- G. Kipshidze
- Gregory Belenky
- L. Shterengas
- Sergey Suchalkin
- Youxi Lin