Stretchable AlGaN/GaN High Electron Mobility Transistors
Abstract
Creating electronics able to stretch to conform to soft, highly deformable surfaces such as skin or clothing has opened up new application areas ranging from medical diagnostics and therapy to soft robotics. The wide, direct band gap gallium nitride (GaN) makes it a promising material for the high-power, high-frequency electronic devices necessary for efficiently conditioning wirelessly coupled power in stretchable systems. Since most stretchable electronics are intended to interact with soft biological tissue such as human skin, efficiency, reduction of resistive losses and resulting heat generation become particularly important. Since human skin can stretch up to 100 percent in certain parts of the body, creating truly stretchable GaN devices becomes necessary for wearable systems. In this work we propose fabricating the first stretchable GaN high electron mobility transistor (HEMT) by fabricating transistors in specialized wavy patterns that are known to reduce the peak mechanical stress during stretching in other material systems.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2019
- Accession Number
- AD1069653
Entities
People
- Nathan Lazarus
- Randy Tompkins
Organizations
- United States Army