HgNO3 sensitivity of AlGaN/GaN field effect transistors functionalized with phytochelating peptides

Abstract

This study examined the conductance sensitivity of AlGaN/GaN field effect transistors in response to varying Hg/HNO3 solutions. FET surfaces were covalently functionalized with phytochelatin-5 peptides in order to detect Hg in solution. Results showed a resilience of peptide-AlGaN/GaN bonds in the presence of strong HNO3 aliquots, with significant degradation in FET ID signal. However, devices showed strong and varied response to Hg concentrations of 1, 10, 100, and 1000 ppm. The gathered statistically significant results indicate that peptide terminated Al- GaN/GaN devices are capable of differentiating between Hg solutions and demonstrate device sensitivity.

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Document Details

Document Type
Technical Report
Publication Date
Jun 07, 2016
Accession Number
AD1070432

Entities

People

  • Albena Ivanisevic
  • Felix Kaess
  • Luis Hernandez-balderrama
  • Nathaniel Rohrbaugh
  • Ramón Collazo
  • Ronny Kirste

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Compound Semiconductors
  • Detection
  • Electron Mobility
  • Electrons
  • Field Effect Transistors
  • Heavy Metals
  • High Electron Mobility Transistors
  • Ionizing Radiation
  • Liquid Chromatography
  • Materials
  • Materials Science
  • Metals
  • Physical Chemistry
  • Semiconductors
  • Two Dimensional

Readers

  • Analytical Chemistry
  • Molecular and Cellular Biochemistry
  • Semiconductor Device Technology