Effect of Surface Morphology on Diode Performance in Vertical GaN Schottky Diodes

Abstract

The properties of thick GaN layers grown by metal organic chemical vapor deposition on 2" HVPE substrates were investigated. Although the epilayer is smooth on a microscopic scale with high quality layers as evidenced by X-ray diffraction and photoluminescence, macroscopic morphological variations are observed on the wafer surface. These variations correspond to disparities in leakage current in fabricated Schottky barrier diodes, with rougher macroscopic morphology resulting in increased leakage.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Oct 06, 2016
Accession Number
AD1070828

Entities

People

  • Charles R. Eddy
  • James C. Gallagher
  • Jennifer K Hite
  • Karl D. Hobart
  • Lunet E. Luna
  • Michael A. Mastro
  • Rachael L. Myers-ward
  • Travis J. Anderson

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Diodes
  • Electron Mobility
  • Electronics Laboratories
  • Epitaxial Growth
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Materials
  • Microwave Integrated Circuits
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Power Electronics
  • Roughness
  • Schottky Diodes
  • Semiconductors
  • Spectra
  • Surface Roughness

Fields of Study

  • Materials science

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Nanocomposite Materials Science
  • Semiconductor Device Technology