Electron Drift Mobility of Degenerate Semiconductors Due to Ionized Impurity Scattering-Phase 1

Abstract

Study of the electron drift mobility of degenerate semiconductors due to ionized impurity scattering and the electron drift mobility of degenerately doped zinc oxide (ZnO). The objectives for Phase I was to derive analytical expressions for the electron mobility of degenerate semiconductors dominated by ionized impurities, including non-parabolic conduction bands, wave function admixture, Rode-Cetnar screening, impurity compensation, and multiply ionized impurities. Also to compare calculated numerical results to results for classical parabolic bands and Thomas-Fermi screening.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2019
Accession Number
AD1071253

Entities

People

  • D. L. Rode

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors
  • Space

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Conduction Bands
  • Crystal Lattice Vibrations
  • Electron Mobility
  • Electron Scattering
  • Electrons
  • Energy Bands
  • Energy Gaps
  • Fermi Levels
  • Free Electrons
  • Government Procurement
  • Impurities
  • Mobility
  • Scattering
  • Semiconductors
  • Wave Functions

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics