Electron Drift Mobility of Degenerate Semiconductors due to Ionized Impurity Scattering - Phase 3

Abstract

Analysis of electron drift mobility of degenerate semiconductors due to ionized impurities and electron drift mobility of degenerately doped zinc oxide (ZnO).

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Document Details

Document Type
Technical Report
Publication Date
Apr 25, 2019
Accession Number
AD1071255

Entities

People

  • D. L. Rode

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Computer Programs
  • Dielectric Permittivity
  • Electron Mobility
  • Electrons
  • Energy Gaps
  • Experimental Data
  • Fermi Levels
  • Hall Effect
  • Impurities
  • Magnetic Fields
  • Materials
  • Measurement
  • Mobility
  • Scattering
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics