Adverse effects of low density silicon dioxide deposited via plasma enhanced chemical vapor deposition for silicon photonic applications

Abstract

Analysis and experimental demonstration of adverse device performance of silicon waveguides clad in silicon dioxide (SiO2) deposited through plasma enhanced chemical vapor deposition (PECVD) is presented. The PECVD SiO2 is of lower density in the vicinity of silicon strip waveguides and it shows a refractive index of n = 1.253 and an estimated density of SiO2 = 1.27g/cm3. The etch rate of this low density (LD) SiO2 is two times higher than anticipated. It is shown that a silicon ring resonator sustains a 7.3nm resonance blue shift from the predicted center wavelength due to the LD SiO2 cladding in the neighborhood of silicon waveguides.

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Document Details

Document Type
Technical Report
Publication Date
Mar 14, 2019
Accession Number
AD1071318

Entities

People

  • Joanna Ptasinski

Organizations

  • Naval Information Warfare Center Pacific

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Department Of Defense
  • Engineering
  • Fabrication
  • Films
  • Governments
  • Information Operations
  • Low Density
  • Manufacturing
  • Materials
  • Measurement
  • Optical Properties
  • Photonics
  • Refractive Index
  • United States
  • United States Government
  • Vapor Deposition

Readers

  • Mathematics or Statistics
  • Nanofabrication and Microfabrication.
  • Optical Physics and Photonics.