Equipment for the Optical Characterization of AlGaN Nanowire Heterostructures for Deep Ultraviolet Optoelectronics
Abstract
In this project, we propose to investigate the epitaxy and structural and optical properties of Al-rich AlGaN nanowire heterostructures. The nanowires are grown using the special technique of selective area epitaxy to achieve a precise control of their size, spacing, and surface morphology, and the formation of quantum dots is incorporated to achieve high efficiency, tunable emission in the deep UV spectral range. We request a deep UV photoluminescence system to characterize the optical properties of AlGaN nanowire heterostructures. The system includes pump lasers, high resolution spectrometer, deep UV CCD, cryostat, mirrors, lenses, and other related optical components. Such a system is essential required for the research and development of AlGaN nanowire light sources, including LEDs and electrically pumped lasers operating in the UV-C band.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 2018
- Accession Number
- AD1072040
Entities
People
- Zetian Mi
Organizations
- University of Michigan