Band-Anticrossed Low-Noise Avalanche Photodiode Materials
Abstract
The major goal of this effort was to significantly increase the multiplication levels and extended spectral response from InAs-based avalanche photodiodes (APD), as well as a superior understanding of the fundamental material properties that give rise to low-noise multiplication. The major goal of the Add-On to the program was to unambiguously demonstrate the staircase APD operation using the AlInAsSb alloy system.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 11, 2018
- Accession Number
- AD1072792
Entities
People
- Joe Campbell
- Seth R. Bank
Organizations
- University of Texas at Austin