Accelerated Carrier Recombination by Grain Boundary/Edge Defects in MBE Grown Transition Metal Dichalcogenides

Abstract

Defect-carrier interaction in transition metal dichalcogenides (TMDs) plays important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated the effect of grain boundary/edge defects on the ultrafast dynamics of photoexcited carrier in molecular beam epitaxy (MBE)-grown MoTe2 and MoSe2.Wefound that, comparing with exfoliated samples, the carrier recombination rate in MBE grown samples accelerates by about 50 times.

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Document Details

Document Type
Technical Report
Publication Date
May 04, 2018
Accession Number
AD1072800

Entities

People

  • Amritesh Rai
  • Anupam Roy
  • Feng He
  • Hema C. Movva
  • Ke Chen
  • Sanjay K. Banerjee
  • Xianghai Meng
  • Yaguo Wang

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Bipolar Junction Transistors
  • Charge Carriers
  • Chemical Vapor Deposition
  • Crystal Lattice Vibrations
  • Detection
  • Femtosecond Lasers
  • Films
  • Frequency
  • Grain Boundaries
  • Materials
  • Optical Detection
  • Semiconductor Devices
  • Semiconductors
  • Thin Films
  • Transition Metals
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene