Nanoporous Aluminum Oxide Templates of Arbitrary Thickness on Silicon Carrier
Abstract
There is a great interest to grow AAO templates directly on silicon as a carrier wafer, however most attempts rely on film deposition techniques that are generally suited for depositions on the order of 1 m. Thicker aluminum films are desirable in order to achieve better ordering of the AAO pores through two-step anodization and for greater aspect ratio for applications where surface area is the dominant factor such as solar cell and supercapacitor devices. Here, AlSi alloys are used as adhesion layers between aluminum foils and silicon wafers as a solution to the thin film problem. High purity aluminum foils and silicon wafers are pressed together as a diffusion couple. The couple is then annealed under argon atmosphere at temperatures from 550 deg C to 650 deg C (from below the AlSi eutectic temperature of 577 deg C to just below the Al melting temperature of 660 deg C) for various times. Cross sections of these couples are examined under scanning electron microscopy (SEM) to determine the thickness of the diffusion region and to check for the presence of voids. Bonded Al-AlSi-Si composites are anodized in oxalic acid using a two-step process, and the final AAO morphology is examined under SEM.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 30, 2019
- Accession Number
- AD1073347
Entities
People
- Anna Skinner
- Gibson P. Scisco
- J.j. Hill
- K.j. Ziegler
- K.s. Jones
Organizations
- University of Florida