Acquisition of the Auger Electron Probe for In Situ Control of MBE Growth of Ultra Narrow Gap Metamorphic Semiconductor Materials
Abstract
The Veeco GEN-930 solid-source MBE system was complemented with the capability to perform the efficient low temperature surface preparation of the nano-patterned heterostructure wafers and metamorphic virtual substrates for the subsequent epitaxy. The atomic hydrogen cleaning will now be performed to prepare atomically clean surfaces for growth of the novel mid-infrared photonic crystal surface emitting lasers and ultra-short period long-wave infrared photodetectors. The critical aspect of this enabling technology is that both morphology and optical and electrical properties of the previously prepared nanostructured epitaxial wafers would not be compromised by high temperature oxide desorption process. In addition to addressing the needs of the on-going research programs, it will enable development of the high quality InAs- and InSb-based heterostructures. This will open the new band structure and device design capabilities to extend the operating range and enhance the efficiencies of the novel infrared photonic devices for industrial and home security applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 20, 2019
- Accession Number
- AD1075019
Entities
People
- Gregory Belenky
- L. Shterengas
Organizations
- Research Foundation for the State University of New York