Two-Photon Absorption Induced Charge Generation for Single-Event Effects Studies
Abstract
Nonlinear-optical (NLO) approaches were first introduced for the purpose of investigating single-event effects (SEE) in microelectronics in 2002. The primary approach utilized to date is based on two-photon absorption (TPA), in which two sub-bandgap photons are absorbed simultaneously by the material (typically silicon), creating a single electron hole pair. Recent efforts have focused on putting TPA SEE approaches on a quantitative footing. This paper discusses recent developments in that regard.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 25, 2019
- Accession Number
- AD1075225
Entities
People
- Ani Khachatrian
- Dale McMorrow
- Jeffrey H. Warner
- Joel M. Hales
- S. Büchner
Organizations
- United States Naval Research Laboratory