Overcoming Barriers to the Adoption of Wide-Bandgap Semiconductors for Power Electronics
Abstract
Wide-bandgap (WBG) power semiconductor devices offer enormous energy efficiency gains in a wide range of potential applications. As silicon semiconductors are fast approaching their performance limits for high power requirements, WBG semiconductors such as gallium nitride and silicon carbide with their superior electrical properties are likely candidates to replace silicon in the near future. Along with higher blocking voltages, WBG semiconductors offer breakthrough relative circuit performance enabling low losses, high switching frequencies, and high temperature operation. However, even with the considerable materials advantages, a number of challenges are preventing widespread adoption of power electronics using WBG semiconductors. The U.S. Department of Energys Advanced Research Project Agency for Energy (ARPA-E), has launched several programs to fund transformational innovations in WBG semiconductor technology in order to overcome the barriers to adoption in power electronics. From materials and devices to modules and circuits to application-ready systems integration, ARPA-E projects have demonstrated the potential of WBG semiconductors in high-efficiency power electronics to enable broad adoption in energy applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 25, 2019
- Accession Number
- AD1075269
Entities
People
- Daniel W. Cunningham
- Eric P. Carlson
- Isik C. Kizilyalli