Active Silicon Photonic Device Performance after 60Co Gamma Radiation
Abstract
In this work, we test Si vertical junction disk modulators and waveguide-integrated Ge PIN photodiodes to see how the key performance metrics are affected by 60Co gamma radiation (total ionizing dose), a common proxy for simulating a mix of high energy ion particle flux. It is found that reverse bias dark current increases significantly for both devices after 1 Mrad exposure. Whereas the bandwidth of the Si disk modulator decreases by 6.5 % to 16.6 GHz after 1 Mrad dose, the bandwidth of the Ge PIN photodiode is unaffected and remained close to 40 GHz to within the uncertainty of the measurement.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 25, 2019
- Accession Number
- AD1075342
Entities
People
- Andrew Pomerene
- Andrew Starbuck
- Anthony Lentine
- Christina Dallo
- Christopher Derose
- Christopher Long
- Dana Hood
- Douglas Trotter
- Galen Hoffman
- Michael Gehl
- Nicholas Martinez
- Paul Dodd
- Scot Swanson
Organizations
- Sandia National Laboratories