A Multi-Time Programmable Memory Technology in a Native 14nm FINFET Process using Charge Trap Transistors (CTTs)

Abstract

Described is a Multi-Time Programmable Memory (MTPM) solution, manufactured in a 14 nm bulk FINFET technology, which requires no process adders or additional masks, using Charge Trap Transistors (CTTs). Outlined are the technological breakthroughs required to support multi-time program and erase of CTTs for this secure embedded nonvolatile memory (eNVM) technology. For the first time, hardware results demonstrate an endurance of > 103 Program/Erase cycles. Data retention lifetime of > 10 years at 125 deg C and scalability to 7 nm has been confirmed.

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Document Details

Document Type
Technical Report
Publication Date
Mar 25, 2019
Accession Number
AD1075344

Entities

People

  • Dan Moy
  • Darren Anand
  • Derek Leu
  • Eric Hunt-schroeder
  • Faraz Khan
  • John Fifield
  • Norman Robson
  • Robert Katz
  • Sebastian Ventrone
  • Toshiaki Kirihata

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Computer Programming
  • Efficiency
  • Embedded Systems
  • Heat Of Activation
  • High Temperature
  • Scalability
  • Simulations
  • Substrates
  • Transistors

Readers

  • Educational Psychology
  • Integrated Circuit Design and Technology.
  • Nanofabrication and Microfabrication.