Flexible beta-Ga2O3 Nanomembrane Schottky Barrier Diodes

Abstract

We have demonstrated high power flexible Schottky barrier diodes (SBDs) on a plastic substrate using single crystalline beta-Ga2O3 nanomembranes (NMs). In order to realize flexible high power beta-Ga2O3 SBDs, a sub-micron thick free-standing beta-Ga2O3 NMs were created from a bulk beta-Ga2O3 substrate and transfer-printed onto the plastic substrate via a micro-transfer printing method. It was revealed that the material property of beta-Ga2O3 NMs such as crystal structure, electron affinity, and bandgap remains unchanged compared with its bulk properties. Flexible beta-Ga2O3 SBDs exhibit the record high critical breakdown field strength (Ec) of 1.2 MV/cm in the flat condition and 1.07 MV/cm of Ec under the bending condition. Overall, flexible beta-Ga2O3 SBDs offer great promise for future flexible energy convergence systems and are expected to provide a much larger and more versatile platform to address a broader range of high-performance flexible applications.

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Document Details

Document Type
Technical Report
Publication Date
Mar 25, 2019
Accession Number
AD1075348

Entities

People

  • Edward Swinnich
  • Jung-Hun Seo
  • Md Nazmul Hasan

Organizations

  • University at Buffalo

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Carrier Mobility
  • Crystal Structure
  • Crystals
  • Electronics
  • Electrons
  • Energy Bands
  • Fabrication
  • Frequency
  • Materials
  • Metal-Semiconductor Junctions
  • Power Electronics
  • Raman Spectra
  • Semiconductors
  • Spectra
  • Tensile Strain
  • Wide Bandgap Semiconductors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Marine Ecological Systems Migration
  • Solar Photovoltaics and Thermoelectric Devices.

Technology Areas

  • Microelectronics