Development of beta-(AlxGa1-x)2O3/Ga2O3 Heterostructures

Abstract

The Beta-(AlxGa1-x)2O3/ Ga2O3 heterostructure is a promising element of advanced designs to fully exploit the excellent material properties of Beta-Ga2O3 for power devices. However, Beta-(AlxGa1-x)2O3 growth is challenging because of the different crystal structure of the corundum-phase Al2O3 and the monoclinic phase Beta-Ga2O3. Existing growth conditions have resulted in an Al composition lower than x= 25% achieved in Molecular Beam Epitaxy (MBE) growth. A recent development of a metal-oxide catalyzed epitaxy (MOCATAXY) growth condition enabled a tremendous expansion of the growth window, pushing the growth temperature more than 200 deg C higher than the typical growth temperatures. This makes it possible to achieve high Al content near 60% in the monoclinic phase based on the phase diagram. Tremendous research opportunities are foreseen in the development of high Al content Beta-(AlxGa1-x)2O3 films. Expanding the growth regime through MOCATAXY using In could help improve heterostructure growth for future devices.

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Document Details

Document Type
Technical Report
Publication Date
Mar 25, 2019
Accession Number
AD1075661

Entities

People

  • Akhil Mauze
  • James S. Speck
  • Yuewei Zhang

Organizations

  • University of California

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Electron Microscopy
  • Electron Mobility
  • Energy Bands
  • Films
  • High Resolution
  • Materials
  • Materials Science
  • Modulation
  • Phase Diagrams
  • Solid State Physics
  • Transmission Electron Microscopy
  • Transport Properties
  • Valence Bands
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Systems Analysis and Design